ZnO thin film had been deposited on the glass by sputtering method, and the electrical and structural properties were investigated. When the rf power was 180W and sputtering was 10 m Torr at room temperature, Al-doped ZnO thin film had the lowest resistivity(1$ imes10^{-4}Omegacdot{cm}$) and then carrier concentration and Hall mobility were $6.27 imes10^{20} cm^{-3} and 22.04 cm^2/Vcdot$s, respectively. The undoped ZnO thin film had about 10$ imes10^{14}Omegacdot cm$ resistivity when oxygen content was 10% or more at room temperature. When the oxygen content was 50% and below and sputtering pressure was 1.0$ imes$1.0 ulcorner Torr, the surface morphology of thin film observed by SEM was overall uniform.