In this study the thin films with the structure of Si+SiO$_2$+TiN are made by RF supttering method. TiN, which has small diffusion coefficient and low resistivity, is evaporated between SiO$_2$ and Al layers. It investigates the V-R characteristics depending on the thickness of SiO$_2$ which is used as insulation layer and researches its effects on voltage stability of thin film and varistor. These films show very small resistance valus in negative(-) voltage and large and large value in positive voltage band, and with the increase of voltage, resistance value is rapidly reduced and the satisfactory characteristic of varistor is shown at +1[V]. It is found that resistance value of TiN thin film is small and also TiN thin film has more current than the thin film which is not evaporated by TiN thin film. When Al electrode is evaporated of SiO$_2$ thin film, spiking occurs, but the spiking can be prevented with evaporation of TiN between SiO$_2$ and Al layers and this thin films in made easily because of its good attachment. With the increase of voltage, the resistance is changed into non-linear pattern and the bidirectional varistor characteristic is shown and then its theory can be verified by this experiment. Accordingly, when TiN is evaporated of Si Wafer(n-100), it obtains better voltage-resistance than thin film which is not evaporated and also when varistor character is used electrically to automatic control element such as elimination of flame, power distribution arrestor and constant voltage compensation, satisfactory reproducibilities are expected.