Neutral stream was generated from Helicon plasma source and was applied to etch silicon for the purpose of preventing physical and electrical damages from the bombardment of charged particles with high translation energy. By installing a permanent magnet and applying positive bias beneath the substrate, the cusp-magnetic and electric fiddles were generated in order to remove the charged particles from the downstream plasma. As a result, the electron density and ion density in the vicinity of the substrate were reduced by 1/1000 and 1/10, respectively. The directional etching of silicon was observed and the etch rate was found to be very low to below 100 $AA$/min at a pressure of $8.5{ imes}10^{-4}$ Torr, when $Cl_2$ and 10% $SF_{sigma}$ etchant gases were used.