BN ceramics with 0.07wt% $V_{2}O_{5}$ and 0.03wt% CuO(BNC3V7) sintered at $900^{circ}C$ where it is possible for these to be co-fired with Ag electrode. Dielectricconstant of 44.3, TCF of 22 ppm$/^{circ}C$ and $Qxf_{o}$ value of 22,000 GHz can be obtained from BNC3V7, multilayer type band pass filters using tapped method and conventional method were designed for PCS (Personal Communication System) applications. Tapped method by adopting input/output-tapping scheme the chip filter stucture becomes simpler and needs fewer layers than that using the conventional input/output-coupling scheme. A multilayer type band pass filter fabricated by screen-printing with silver electrode after tape casting. The simulated characteristics of the fabricated filters sintered at $900^{circ}C$ were compared with the designed ones. Even though the centered frequencies of tapped and conventional band pass chaip filters were measured to shift about 90MHz downward, the band pass characteristics of both filters were similar that of designed ones. The spuriousresonance characteristic of tapped pass chip filter was better than that of conventional chip filer.