We propose a simple technique to obtain field-induced absorption changes of an electroabsorption waveguide by using photocurrent generated inside a waveguide. Photocurrent proportional to the absorbed power and displaying Fabry-Perot interference fringes were observed and the field-induced absorption changes were derived from the ratio of resonant and anti resonant currents in the photocurrent spectra. The field-induced absorption change of InGaAsP waveguide for 1.5V reverse bias voltage at 1.55 $mu extrm{m}$ was determined to be $~157cm^{-1}$.