$La_{2-x}Sr_{x}CuO_{4}$ single-crystalline films were prepared on bulk single crystals of Zn-doped $La_{2-x}Sr_{x}CuO_{4}$ as the substrates by LPE technique using two deferent methods. When prepared using an alumina crucible in normal electrical furnace, the $La_{2-x}Sr_{x}CuO_{4}$ films were contaminated with less than 3 at% aluminum from the alumina crucibles. Aluminum contamination either reduced or completely destroyed the superconductivity of the $La_{2-x}Sr_{x}CuO_{4}$ films, For LPE growth by modified TSFZ method using an infrared heating furnace without crucibles, the $La_{2-x}Sr_{x}CuO_{4}$ films of x=0.11 showed superconducting with $Tc_{onset}=36;K$, which is 10 K higher than that in the $La_{2-x}Sr_{x}CuO_{4}$ bulk single crystals.