The suggested electrode structure of MOCVD-Pt/sputtered-Ru/polysilicon has an excellent adhesion with increasing annealing temperatures and shows a stable electrode structure up to $600^{circ}C$. However, the ruthenium used for barrier layer increased the roughness of platinum bottom electrodes because ruthenium diffused through the Pt bottom electrode and reacted with oxygen during the annealing above $700^{circ}C$. The surface roughness increased the resistivity of Pt bottom electrodes. The resistivity of samples annealed at $600^{circ}C$ was about $13mu$Ω.cm. The electrode structure was possible to apply for ferroelectric thin film integration of semiconductor memory devices.