The Al oxide layer formed in 1M $H_2SO_4$ solution and the influence of applied frequency for electrodeposition of Mn on Al oxide layer were characterized using by impedance spectroscopy. Mn compounds were electrodeposited at the base of pores during deposition with applied low frequency voltage. For the Mn deposited oxide layer at 6OHz and 5Hz in 1 g/L $KMnO_4$ solution, in equivalent circuit for interpretation, the resistance ($R_2$) and capacitance ($C_2$) were considered to be due to deposition of Mn on base of pore. The electrochemical behavior of barrier layer and porous oxide layer on Al have been characterized by capacitance ($C_b$) and Young capacitance ($C_Y$) in equivalent circuit model.