We have fabricated optical waveguide which utilizes intermixing of InGaAs/InGaAsP multi quantum well separate confinement heterostructure. The waveguide was fabricated by reactive ion etching technique using $CH_4/H_2$ gas mixture, and the width and depth of the waveguide ware $5{mu}m$ and $1.2{mu}m$, respectively. The propagation loss of the waveguide was measured by Fabry-Perot interference phenomena using tunable laser. For the waveguide after $800^{circ}C$, 30s heat treatment, the measured loss was 3.76dB/cm and 3.95dB/cm for TE and TM mode, respectively. This value is very small compared to other waveguide made by IFVD technique. Hence, this technique can applied to integration of waveguide and electronic devices.