TFELD의 절연층으로 사용하기 위해 ITO 유리위에 BST박막을 rf 마그네트론 스퍼터링법으로 증착시켰다. $O_2/(Ar+O_2)$의 혼합비는 10%, 기판온도는 상온에서 $500^{circ}C$까지 변화를 주었고, 분위기압은 5 mTorr에서 30 mTorr까지 변화시켰다. 다양한 증착조건에서 성장된 BST박막의 전기적, 광학적, 구조적 및 화학량론적인 특성을 조사하였다. BST박막성장의 최적조건은 기판온도 $400^{circ}C$, 분위기압 30 mTorr에서 구할 수 있었다. 주파수 1 kHz에서 비유전율은 254였고, 누설전류밀도는 5 MV/cm의 전계에서 $3.3{ imes}10^{-7};A/cm^2$이하로 나타났으며, 가시광영역에서 광투과율은 82%였다.
BST thin films were deposited on the ITO coated glass for using TFELD insulating layer by rf magnetron sputtering method. $O_2/(Ar+O_2)$ mixing ratio was 10%, substrate temperature was changed from R.T. to $500^{circ}C$, and working pressure was changed from 5 mTorr to 30 mTorr. BST thin films deposited with various conditions were investigated electrical, optical, structural properties, and stoichiometry. The result of investigation was achieved good fabrication condition that substrate temperature of $400^{circ}C$, and working pressure of 30 mTorr. Relative dielectric constant of 254 at 1 kHz, leakage current density was below $3.3{ imes}10^{-7;}A/cm^2$ at 5;MV/cm applied electric field, and transmittance was over 82% at visible range.
