The light emitting diode (LED) was fabricated from n-type porous silicon. We investigated both the current-voltage characteristics of the LED with various electrode materials and changes of electroluminescence with applied current density. Also we probed changes in electroluminescence as a function of operation time at a given current. In order to Improve the contact area between the electrode material and porous silicon layer, we deposited indium on porous silicon layer by electroplating and investigated the electric characteristics of the LED and changes of electroluminescence.