Step edge Josephson junctions in c-axis oriented $YBa_2Cu_3O_7$ films were fabricated on $CeO_2$ buffered sapphire substrates. The step angle was controlled in the wide range of $20^{circ}sim75^{circ}$ by the Ar ion milling technique. I-V curves of junction fabricated on the thickness ratio of $sim$0.8 and the step angle of $35^{circ}$ were exhibited RSJ-like behavior with $I_CR_N$ product of $sim250{mu}A$ and critical current density of $sim2 imes10^4A/cm^2$ at 77 K. Critical current of step edge junction was increased linearly with decreasing temperature but the normal resistance was almost constant. Total samples of step edge Josephson junction was satisfied a scaling behavior of $I_CR_N{propto}(J_C)^{0.5}$.