PZT thin films(3500 ) have been prepared onto $Pt/Ti/SiO_2/Si$ substrates with a RF magnetron sputtering system using PB1.05(Zr0.52,Ti0.48)O3 ceramic target. We used two-step annealing techniques. As the RTA times and temperatures were increased, crystallization of PZT thin films were enhanced. The ferroelectric characteristics of PZT capacitors fabricated at $700^{circ}C$ for 60 seconds were like these remanent polarization were $12.1 muC/cm^2$, coercive field were 110 kV/cm, leakage current density were $4.1 imes10-7 A/cm^2,; varepsilonr=442,$ and remanent polarization were decreased by 22% after 1010 cycles, respectively.