- 기판 조건에 따른 SBT 강유전체 커패시터의 특성
- ㆍ 저자명
- 박상준,장건익
- ㆍ 간행물명
- 전기전자재료학회논문지
- ㆍ 권/호정보
- 2000년|13권 2호|pp.143-150 (8 pages)
- ㆍ 발행정보
- 한국전기전자재료학회
- ㆍ 파일정보
- 정기간행물| PDF텍스트
- ㆍ 주제분야
- 기타
Ferroelectric SrxBi2+yTa2O9+$alpha$ thin films with various compositions(x=0.7, 0.8, 1, y=0.3, 0.4) were prepared by sol-gel method. The film with moled ratio of 0.8:2.3:2.0 in Sr/Bi/Ta, which was deposited on Pt/SiO2/Si (100), showed better ferroelectric properties than other films. To investigate substrate effects, the same compositions were spin coated on Pt/Ti/SiO2/Si (100) substrates. At an applied voltage of 5V, the dielectric constant($varepsilon$r), remanent polarization (2Pr) and coercive field (Ec) of the Sr0.8Bi2.3Ta2O9+$alpha$ thin film prepared on Pt/Ti/SiO2/Si (100) were about 296, 24$mu$C/$ extrm{cm}^2$ and Ec of 49kV/cm respectively. Both SBT films firred at 80$0^{circ}C$ revealed no fatigue up to 1010 cycles. Retention characteristics of these capacitors showed no degradation up to 104 sec.