- RF Magnetron Sputtering법에 의한 FED용 $ZnGa_2$$O_4$형광체의 특성분석
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- 한진만,박용민,장건익
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- 전기전자재료학회논문지
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- 2000년|13권 9호|pp.776-780 (5 pages)
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- 한국전기전자재료학회
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ZnGa$_2$O$_4$thin films were prepared on Si(100) wafer in terms of RF power, substrate temperatures and Ar/O$_2$flow rate by RF Magnetron Sputtering. Photoluminescence(PL) measurement was employed to observe the emission spectra of ZnGa$_2$O$_4$films. The influences of various deposition parameters on the properties of grown films were studied. The optimum substrate deposition temperature for luminous characteristics was about 50$0^{circ}C$ in this investigation. PL spectrum of ZnGa$_2$O$_4$ thin films showed broad band luminescence spectrum.