For the DLC-coaled Si-tip FEA, the modified lift off-process, by which DLC coated on both gate electrode surface and gate insulator in the gate aperture could be removed, was proposed. In the process, the Al sacrificial layer was deposited on a tilted and rotated substrate by an e-beam evaporation, and DLC film was coated on the substrate by PA-CVD method. Afterward the DLC was perfectly removed except the DLC films coated on emitter tips by etch-out of Al sacrificial layer. Current-voltage curves and current fluctuation of the DLC-coated Si-tip FEA showed that the proposed lift-off process played an important role in decreasing gate leakage current and stabilizing omission current.