Tungsten(W) thin films with good adhesion property and low resistivity (~10 $mu$Omega$$</TEX>.cm) were deposited directly on $SiO_2$ by LPCVD. The adhesion property of W thin films on $SiO_2$ improves as the temperature and/or $SiH_4/WF_6$ gas ratio increase. Specifically tungsten thin films could be deposited on $SiO_2$ even at $350^{circ}C$ if the gas ratio of 2 was employed. The resistivity of tungsten thin films deposited at $350^{circ}C$ was high due to the presence of $eta$-W. However, the resistivity can be minimized by increasing the amount of $H_2$ gas flow. Therefore, it is shown in this work that the adhesion of tungsten thin films on $SiO_2$ can be improved simply by controlling the process parameters (e.g., temperature, gas ratio and $H_2$ flow rate) without employing complex deposition methods or additional glue layers.