Semiconductor diode detectors coated with neutron reactive material are presently under investigation for various uses, such as remote sensing of thermal neutrons, fast neutron counting, and thermal neutron radiography. Theory indicates that single-coated devices can yield thermal neutron efficiencies from 4% to 11 %, which is supported by experimental evidence. Radiation endurance measurements indicate that the devices function well up to a limiting thermal neutron fluence of $10^{13}/cm^2$, beyond which noticeable degradation occurs. Thermal neutron contrast images of step wedges and simple phantoms, taken with dual in-line pixel devices, show promise for thermal neutron imaging detectors.