Titanium boride ($ extrn{TiB}_{x}$) films were deposited on (100) silicon substrates at the substrate temperature of $500^{circ}C$ by means of the co-evaporation of titanium and boron evaporants during deposition. The co-evaporation method makes it possible to deposit the non-stoichiometric films with different boron-to-titanium ratio($0{le}B/Ti le 2.5$). The resistivity increases linearly as the boron-to-titanium ratio in the as-deposited films is increased. The surface roughness of $ extrn{TiB}_{x}$ films is changed as a function of the boron-to-titanium ratio. The XRD spectrum for pure titanium film shows a highly (002) preferred orientation. For B/Ti=0.59 ratio only a single TiB phase that shows a (111) preferred orientation is observed. However, the $ extrn{TiB}_{x}$ phase with the hexagonal structure of the $AlB_2$(C32) type appears as the boron concentration increase, and only a single $ extrn{TiB}_{x}$ phase is observed for $B/Ti ge 2.0$ ratio. The $ extrn{TiB}_{x}$/Si samples reveal a tensile stress (3~$20{ imes}^9$dyn/$ extrm{cm}^2$) in the overall composition of the films, although the magnitude of the residual stresses is depended on the nominal B/Ti ratio.