PZT thin films (3500${AA}$) ahve been prepared onto Pt/Ti/corning glass (1737) substrates with a RF magnetron sputtering system using Pb$sub$1.50/(Zr$sub$0.52/,Ti$sub$0.48)O$_3$ ceramic target. We used two-step annealing techniques, PZT thin films were grown at a 300$^{circ}C$ substrate temperature and then subjected to an RTA treatment. In case of 500$^{circ}C$ RTA temperature show pyrochlore phase. The formation of Perovskite phase started above 600$^{circ}C$ and PZT thin films generated (101) preferred orientation. As the RTA time and temperature increased, crystallization of PZT films were enhanced. The PZT capacitors fabricated at 650$^{circ}C$ for 10 minutes RTA treatment showed remanent polarization 30 ${mu}$C/$ extrm{cm}^2$, saturation polarization 42${mu}$C/$ extrm{cm}^2$, coercive field 110kV/cm, leakage current density 2.83x10$^$-7/A/$ extrm{cm}^2$, remanent polarization were decreased by 30% after 10$^$9/ cycles.