The on-current of offset and LDD structured devices in slightly decreased while the off-current are remarkably reduced and almost constant independent of gate and drain voltage because offset and LDD regions behave as a series resistance and reduce the lateral electric field in the drain depletion. Degradation of these devices is dependent upon the offset and LDD length rather than doping concentration in these regions. Also, degradation mechanism has been related to the interface generation rather than the hot carrier injection into gate oxide.