저온(32$0^{circ}C$)에서 SiH$_4$와 $N_2$O 가스의 혼합을 통해 플라즈마화학기상증착(PECVD)법을 이용하여 실리카 광도파로의 클래딩막으로 사용되는 SiO$_2$후막을 제조하였다. 증착변수가 SiO$_2$후막의 특성에 미치는 영향을 살펴보기 위해 $N_2$O/SiH$_4$flow ratio와 RF power에 변화를 주었다. $N_2$O/SiH$_4$ flow ratio가 감소함에 따라 증착속도는 2.9 $mu extrm{m}$/h), 굴절률은 thermal oxide의 굴절률(n=1.46)에 근접하였다.
Silicon diosixde thick film using silica optical waveguide cladding was fabricated by Plasma Enhanced Chemical Vapor Deposition (PECVD) method, at a low temperature (32$0^{circ}C$) and from (SiH$_4$+$N_2$O) gas mixtures. The effects of deposition parameters on properties of SiO$_2$thick films were investigated by variation of $N_2$O/SiH$_4$flow ratio and RF power. As the $N_2$O/SiH$_4$flow ratio decreased, deposition rate increased from 2.9${mu}{ extrm}{m}$/h to maximum 10.1${mu}{ extrm}{m}$/h. As the RF power increased from 60 W to 120 W, deposition rate increased (5.2~6.7 ${mu}{ extrm}{m}$/h) and refractive index approached at thermally grown silicon dioxide (n=1.46).
