NiO buffer layers were deposited on texture Ni tapes fur YBCO coated conductors by MOCVD(metal organic chemical vapor deposition) method, using a single solution source. Variables were deposition temperature and flow rate of $0_2$carrier gas. At higher temperatures, The NiO(111) texture was well developed, but the NiO(200) texture was developed at low temperatures. The best result was obtained at the deposition temperature of$ 470^{circ}C$ and the gas flow rate of 200 sccm. FWHM value of $omega$-scan fur NiO(200) of the film and $Phi$-scan for NiO(111) of the film was $4.2^{circ}$ and $7^{circ}$, respectively.