The Stress intensity factors for edge cracks located at the bonding interface between the elastic semiconductor chip and the viscoelastic adhesive layer have been investigated. Such cracks might be generated due to stress singularity in the vicinity of the free surface. The domain boundary element method(BEM) has been employed to investigate the behavior of interface stresses. The overall stress intensity factor for the case of a small interfacial edge crack has been computed. The magnitude of stress intensity factors decrease with time due to viscoelastic relaxation.