The stress intensity factors for edge cracks located at the bonding interface between the semiconductor chip and the adhesive layer subjected to a uniform transverse tensile strain are investigated. Such cracks might be generated due to a stress singularity in the vicinity of the free surface. The boundary element method (BEM) is employed to investigate the behavior of interface stresses. The amplitude of complex stress intensity factor depends on the crack length, but it has a constant value at large crack lengths. The rapid propagation of interface crack is expected if the transverse tensile strain reaches a critical value.