Effect of abnormal grain growth and heat treatment time on the electrical properties of donor-doped semiconductive BaTiO$_3$ceramics was examined. La-doped BaTiO$_3$ceramics was sintered at 134$0^{circ}C$ for different times from 10 to 600 min in order to change the volume fraction of the abnormal grains in samples. As a result, samples with different volume fraction of abnormal grain growth from 22 to 100% were prepared. The samples were annealed at 120$0^{circ}C$ for various times. The resistivity of the sam-ples at room and above Curie temperature was examined. The complex impedance measurement as functions of the volume fraction of abnormal grains and annealing time was conducted. Separation of complex impedance semicircle was observed in a sample in which abnormal and fine grains coexist. The results are discussed from a viewpoint of microstructure-property relationship.