The etching behaviors of the ferroelectric $YMnO_3$ thin films were studied by an inductively coupled plasma (ICP). The maximum etch rate of $YMnO_3$ thin film is 300 ${AA}/min$ at Ar/$Cl_2$of 2/8, RF power of 800W, dc bias voltage of 200V, chamber pressure of 15mTorr and substrate temperature of $30^{circ}C$. Addition of $CF_4$ gas decrease the etch rate of $YMnO_3$ thin film. From the results of XPS analysis, nonvolatile $YF_x$ compounds were found on the surface of $YMnO_3$ thin film which is etched in Ar/$Cl_2$/CF$_4$plasma. The etch profile of YMnO$_3$film is improved by addition of $CF_4$ gas into the Ar/$Cl_2$ plasma. These results suggest that YF$_{x}$ compound acts as a sidewall passivants which reduce the sticking coefficient of chlorine on $YMnO_3$.>.  광주문화재단 - 참가자 : 한국디자인학회 회원 및 비회원 - 참가비 : 회원 (사전등록자 및 예약자 8만원)               학생회원 (사전등록자 및 예약자 5만원)               회원 ( 현장등록자 10만원)               비회원 20만원 ( 사전등록 18만원) - 제공내역 : 숙박, 3식(석식, 조식, 중식 제공), 워크샵 수료증, 워크샵북 증정   ??