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Wide bandgap III-nitride semiconductors: opportunities for future optoelectronics
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  • Wide bandgap III-nitride semiconductors: opportunities for future optoelectronics
  • Wide bandgap III-nitride semiconductors: opportunities for future optoelectronics
저자명
Park. Yoon-Soo
간행물명
한국결정성장학회지
권/호정보
2002년|12권 1호|pp.11-20 (10 pages)
발행정보
한국결정성장학회
파일정보
정기간행물|ENG|
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기타
이 논문은 한국과학기술정보연구원과 논문 연계를 통해 무료로 제공되는 원문입니다.
서지반출

기타언어초록

The world at the end of the $20^{th}$ Century has become "blue" Indeed, this past decade has witnessed a "blue rush" towards the development of violet-blue-green light emitting diodes (LEDs) and laser diodes (LDs) based on wide bandgap III-Nitride semiconductors. And the hard work has culminated with, first, the demonstration of commercial high brightness blue and green LEDs and of commercial violet LDs, at the very end of this decade. Thanks to their extraordinary properties, these semiconductor materials have generated a plethora of activity in semiconductor science and technology. Novel approaches are explored daily to improve the current optoelectronics state-of-the-art. Such improvements will extend the usage and the efficiency of new light sources (e.g. white LEDs), support the rising information technology age (e.g. high density optical data storage), and enhance the environmental awareness capabilities of humans (ultraviolet and visible photon detectors and sensors). Such opportunities and many others will be reviewed in this presentation.