The fluid flow, heat transfer and the local mass fraction of chemical species in the chemical vapor deposition(CVD) manufacturing process are studied numerically. Flow with a dilute precursor concentration of silane in hydrogen as the carrier gas enters to the reactor and deposits silicon onto the heated surface. The silicon deposition rate using silane is calculated in the horizontal or vertical, axisymmetric reactor. The effects of inlet carrier gas velocity, mass fraction of silane, susceptor angle and rotation of surface on the deposition rate are described.