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Crystallization of Ba-ferrite/sapphire(001) Thin Films Studied by Real-Time Synchrotron X-ray Scattering
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  • Crystallization of Ba-ferrite/sapphire(001) Thin Films Studied by Real-Time Synchrotron X-ray Scattering
  • Crystallization of Ba-ferrite/sapphire(001) Thin Films Studied by Real-Time Synchrotron X-ray Scattering
저자명
Cho. Tae-Sik
간행물명
Journal of magnetics
권/호정보
2002년|7권 2호|pp.51-54 (4 pages)
발행정보
한국자기학회
파일정보
정기간행물|ENG|
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이 논문은 한국과학기술정보연구원과 논문 연계를 통해 무료로 제공되는 원문입니다.
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기타언어초록

The crystallization of amorphous Ba-ferrite/sapphire(001) thin films was studied in real-time synchrotron x-ray scattering experiments. In the sputter-grown amorphous films, we found the existence of epitaxial $Fe_3O_4$ interfacial crystallites (50-${AA}$-thick), well aligned $[0.03^circ$full-width at half-maximum (FWHM)] to the sapphire [001] direction. The amorphous precursor was crystallized to epitaxial Ba-ferrite and alpha-Fe_2O_3$grains in two steps; i) the nucleation of crystalline alpha-Fe_2O_3$ phase started at $300^circ{C}$ together with the transformation of the $Fe_3O_4$ crystallites to the alpha-Fe_2O_3$ crystallites, ii) the nucleation of Ba-ferrite phase occurred at temperature above $600^circ{C}$. In the crystallized films irrespective of the film thickness, the crystal domain size of the alpha-Fe_2O_3$grains was about 250 ${AA}$ in the film plane, similar to that of the Ba-ferrite grains.