Tetrahedral amorphous carbon(ta-C) films were deposited by the filtered vacuum arc(FVA) process. The FVA process has many advantages such as high ionization ratio and the ion energy, which is suitable for dense amorphous carbon film deposition. However, the energy of the carbon ion cannot be readily controlled by manipulating the arc source parameters. In order to control the film properties in wide range, we investigated the dependence of the film properties on the substrate bias voltage. The mechanical properties and the density of the film exhibit the maximum values at about -100 V of the bias voltage. The maximum values of hardness and density were respectively 54$pm$3 GPa and 3.6$pm$0.4 g/㎤, which are 3 to 5 times higher than those of the films deposited by RF PACVD or ion beam process. The details of the atomic bond structure were analysed by Raman and NEXAFS spectroscopy. The change in the film properties for various bias voltages could be understood in the view of the $sp^2$ and $sp^3$ bond fraction in the deposited films.