Pd/Ge/Pd/Ti/Au ohmic contact to n-type InGaAs was investigated with rapid thermal annealing conditions. Minimum specific contact resistivity of $1.1 imes10^{-6}Omega extrm{cm}^2$ was achieved after annealing at $400^{circ}C$/10sec, and a ohmic performance was degraded at higher annealing temperature due to the chemical reaction between the ohmic contact materials and the InGaAs substrate. However, non-spiking planar interface and relatively good ohmic contact($high-10^{-6};{Omega} extrm{cm}^2$) were maintained. This ohmic contact system is expected to be a promising candidate for compound semiconductor devices.