Growth of $La_{2-x}$$Sr_x$Cu$O_4$Single Crystals for Device Application

Growth of $La_{2-x}$$Sr_x$Cu$O_4$Single Crystals for Device Application
Growth of $La_{2-x}$$Sr_x$Cu$O_4$Single Crystals for Device Application

ㆍ 저자명: Tanaka. Isao
ㆍ 간행물명: Progress in superconductivity
ㆍ 권/호정보: 2002년|4권 1호|pp.14-18 (5 pages)
ㆍ 발행정보: 한국초전도학회
ㆍ 파일정보: 정기간행물|ENG|
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ㆍ 주제분야: 기타

이 논문은 한국과학기술정보연구원과 논문 연계를 통해 무료로 제공되는 원문입니다.

서지반출

기타언어초록

We had succeeded to grow bulk sing1e crystals of La／sub 2-x／Sr／sub x／$CuO_4$by the traveling solvent floating zone method (TSFZ), and to prepare La／sub 2-x／Sr／sub x／CuO$_4$single-crystalline thick films on the Zn-doped La$_2$$CuO_4$ substrate by new liquid phase epitaxial technique using an infrared heating furnace (IR-LPE). In this paper, Ireview growth of bulk single crystals and single-crystalline thick films of La／sub 2-x／Sr／sub x／$CuO_4$, and discuss on their device properties to develop high speed integrated electronic devices.

키워드

crystal growth LPE TSFZ intrinsic Josephson junction bulk single crystals single-crystalline film

다운URL