10-V Josephson junction array arranged in 8 parallel stripline paths was fabricated using self-aligning and reactive ion etching techniques. These techniques were introduced in detail with aim of obtaining high-quality junctions. The array has 18,184 Josephson junctions with the area of $12mu extrm{m}$$ imes$$38mu extrm{m}$. The gap voltage and minimum critical current density were about 2.7 ㎷ and ／$23 A extrm{cm}^2$, respectively. And the critical current density and leakage current at 5 volt were about 27 $A／ extrm{cm}^2$ and $5mu extrm{A}$, respectively When operated in the frequency range of 76-88 ㎓, the away generated constant voltage steps up to 14-19 V. The step size near 10-V was more than 7 $mu extrm{A}$.