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Leakage Current Mechanism of Thin-Film Diode for Active-Matrix Liquid Crystal Displays
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  • Leakage Current Mechanism of Thin-Film Diode for Active-Matrix Liquid Crystal Displays
  • Leakage Current Mechanism of Thin-Film Diode for Active-Matrix Liquid Crystal Displays
저자명
Lee. Myung-Jae,Chung. Kwan-Soo,Kim. Dong-Sik
간행물명
The Journal of Korean vacuum science & technology
권/호정보
2002년|6권 3호|pp.126-132 (7 pages)
발행정보
한국진공학회
파일정보
정기간행물|ENG|
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이 논문은 한국과학기술정보연구원과 논문 연계를 통해 무료로 제공되는 원문입니다.
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기타언어초록

The origin of image-sticking in metal-insulator-metal type thin-film diode liquid crystal displays(TFD-LCDs) is the asymmetric current-voltage(I-V) characteristic of TFD element. We developed that TFD-LCDs have reduced-image-sticking. Tantalum pentoxide(Ta$_2$O$sub$5/) is a candidate for use in metal-insulator-metal(MIM) capacitors in switching devices for active-matrix liquid crystal displays(AM-LCDs). High quality Ta$_2$O$sub$5/ thin films have been obtained from anodizing method. We fabricated a TFD element using Ta$_2$O$sub$5/ films which had perfect current-voltage symmetry characteristics. We applied novel process technologies which were postannealed whole TFD element instead of conventional annealing to the fabrication. One-Time Post-Annealing(OPTA) heat treatment process was introduced to reduce the asymmetry and shift of the I-V characteristics, respectively. OPTA means that the whole layers of lower metal, insulator, and upper metal are annealed at one time. Futhermore, in this paper, we discussed the effects of top-electrode metals and annealing conditions.