It is of importance to know that the bonding strength and interfacial stress of SOI wafer pairs to meet with mechanical and thermal stresses during process. We fabricated Si/2000$AA$-SiO$_2$ ∥ 2000$AA$-SiO$_2$/Si SOI wafer pairs with electric furnace annealing, rapid thermal annealing (RTA), and fast linear annealing (FLA), respectively, by varying the annealing temperatures at a given annealing process. Bonding strength and interfacial stress were measured by a razor blade crack opening method and a laser curvature characterization method, respectively. All the annealing process induced the tensile thermal stresses. Electrical furnace annealing achieved the maximum bonding strength at $1000^{circ}C$-2 hr anneal, while it produced constant thermal tensile stress by $1000^{circ}C$. RTA showed very small bonding strength due to premating failure during annealing. FLA showed enough bonding strength at $500^{circ}C$, however large thermal tensile stress were induced. We confirmed that premated wafer pairs should have appropriate compressive interfacial stress to compensate the thermal tensile stress during a given annealing process.