Electrical characteristics of two types of 20 GHz Push-Push GaAs MESFET dielectric resonator oscillators having Wilkinson and T-junction power combiners for the output stage have been investigated. The Push-Push oscillator for suppressing fundamental frequency 10 GHz and enhancing 20 GHz has been designed and realized in microstrip configuration on 20 mil thick RT-Duroid(${varepsilon}_r$=2.52) teflon substrate. Two different types of power combiners, T-junction and Wilkinson, have been considered. Whenever one type of the combiners has been adopted for the output circuit, output power, phase noise and fundamental frequency suppression characteristics of the oscillator have been measured. When the Wilkinson power combiner was used, a maximum output power of 5.67 dBm, a phase noise of -105.5 dBc/Hz at an offset frequency of 100 kHz and a fundamental frequency suppression of -29.33 dBc have been measured. When the T-junction power combiner was used, a maximum output power of -1.17 dBm, a phase noise of -102.2 dBc/Hz at an offset frequency of 100 kHz and a fundamental frequency suppression of -17.84 dBc have been measured.