$SrBi_2Ta_2O_9(SBT)$and$ZrO_2$thin films for MFIS structure(Metal-Ferroelectric-Insulator-Semiconductor) were deposited by RF magnetron sputtering method. In order to investigate the effect of heat treatment of insulator layers and MFIS structure, the insulator layers were heat treated from $550^{circ}C;to; 850^{circ}C$in conventional furnace or RTA furnace under$O_2$and Ar ambient, respectively. After then, C-V characteristics and leakage current were measured. The capacitor with 20 nm thick $ZrO_2$layer treated at RTA$750^{circ}C;in;O_2$ atmosphere had the largest memory window. The C-V and leakage current characteristics of the$Pt/SBT(260nm)/ZrO_2(20nm)/Si$structure were better than those of$Pt/SBT(260nm)/Si$ structure. These results showed that$ZrO_2$films took a role of buffer layer effectively.ely.