We have proposed the junction termination structure of IGBT (Insulated Gate Bipolar Transistor) by employing trench and FLR (Field Limiting Ring), which decrease the junction termination area at the same breakdown voltage. Our proposed junction termination structure, trench FLR is verified by numerical simulator MEDICI. In 600V rated device, the junction termination area is decreased 20% compared with that of the conventional FLR structure. The breakdown voltage of trench FLR with 4 trenches is 768 V, 99 % of ideal parallel-plane junction(1-D) $BV_ceo$.