High quality zincblende ZnTe(100) epilayers have been grown on semi-insulating $CaAs(100pm2^{circ})$substrate by hot-wall epitaxy. To grow high quality ZnTe epilayers, the growth temperature dependence of the surface topography, the growth rate, and the crystalline properties were investigated. From the photoluminescence measured at 10 K, the light hole and heavy hole free exciton emissions splitted by thermal tensile strain were observed and their first excited state emissions were also measured. The low temperature doublet of the heavy hole free exciton is because of the energy separation between longitudinal exciton and transverse exciton due to exciton-polariton coupling.