In this study, a numerical analysis of the deposition of gallium arsenide from TMGa and arsine in a horizontal MOCVD reactor is performed to investigate the effect of inlet diffuser shape of reactor on the flow and deposition characteristics. The effects of two geometric parameters (diffuser angle, diffuser shape) on the growth rate, growth rate uniformity, flow uniformity and pressure loss are presented. As a results, it is found that the optimum linear diffuser angle is in the range of $50^{circ}$∼$55^{circ}$ and parabolic diffuser in the range of $40^{circ}$∼$45^{circ}$ from the viewpoint of growth rate uniformity, flow uniformity and average growth rate. It is also found that variation of diffuser angle has greater impact on growth rate uniformity than average growth rate particularly in parabolic diffuser.