- V형 양자선 레이저의 전류 차단층에 대한 연구
- ㆍ 저자명
- 조태호,김태근
- ㆍ 간행물명
- 전기전자재료학회논문지
- ㆍ 권/호정보
- 2003년|16권 12호|pp.1268-1272 (5 pages)
- ㆍ 발행정보
- 한국전기전자재료학회
- ㆍ 파일정보
- 정기간행물| PDF텍스트
- ㆍ 주제분야
- 기타
In order to enhance current Injection efficiency of Y-groove inner strife(VIS) quantum wire lasers, three different current configurations, n-blocking on p-substrate(VIPS), p-n-p-n blocking on n-substrate(VI(PN)nS), p-blocking on n-substrate(VINS) have been designed and fabricated. Among them VIPS laser showed the most stable characteristics of lasing up to 5 mW/facet, a threshold current of 39.9 mA at 818 nm, and an external differential quantum efficiency of 24 %/facet. The current tuning rate was almost linear 0.031 nm/mA, and the temperature tuning rate was measured to be 0.14 nm/$^{circ}C$.