In this paper, we studied, by numerical calculation, a system, which was composed of metal-film and metal-substrate irradiated by IPIB with beam ion energy 250 keV, current density 10 to 250 A/$ extrm{cm}^2$. While the IPIB irradiation was going on, an induced effect named mixing occurred. In this case, metal-film and part of metal-substrate melted and mixed. The mixing state was kept as it was in melting phase due to the fast cooling rate. Our works were simulating the heating and cooling process via our STEIPIB program and tried to find proper parameters for a specific film-substrate system, 500 nmtitanium film coated on aluminum, to get best mixing results. The parameters calculated for such Ti-Al system were compared with the experimental results and were in good accordance to the experimental results.