SiC-C films were deposited with r. f. magnetron sputtering on substrates followed by argon ion bombardment. These films were then permeated by hydrogen gas under the pressure of $3.23 imes10^{7}$ Pa for 3 hours at temperature of 500K or bombarded with hydrogen ion beam at 5 keV and a dose of $1 imes10^{18}$ ions/$ extrm{cm}^2$. SIMS, AES and XPS were used to analyze hydrogen related species, chemical bonding states of C, Si as well as contamination oxygen due to hydrogen participation in the SiC-C films in order to study the different behaviors of hydrogen in carbon-carbide films due to different hydrogen introduction. Related mechanism about the effects of hydrogen on the element of the SiC-C films was discussed in this paper.