NiCr thin films were fabricated by rf magnetron sputtering for applying to both the top electrode and absorption layer on Pb(Zr, Ti)O$_3$(PZT) thin films for infrared sensors. The rms roughness and resistivity of NiCr films prepared with Ni power of 80 W and Cr power of 50 W showed the most stable oxidation resistance after annealing at $600^{circ}C$ for 5 min in oxygen ambient. The rms roughness and resistivity of NiCr films annealed at $V^{circ}C$ in oxygen ambient were about 2$0AA$ and $70 mu$Ω-cm, respectively. As-deposited Ni/PZT/Pt and NiCr (Ni 80 W, Cr 50 W)/PZT/Pt structures showed well saturated hysteresis loops. However, in case of the samples annealed at $500^{circ}C$ in oxygen ambient, only NiCr/PZT/Pt showed saturated loops having a remanent polarization of 20$mu$C/$ extrm{cm}^2$. Ultra-thin NiCr films showed a possibility as a top electrode for infrared sensors.