Mn-Ni-Co type thin films were prepared at various conditions by a rf magnetron sputtering system. At the condition. or substrate temperature of $300^{circ}C$ and $Ar/O_2$= 10/0, a cubic spinel phase was obtained. When oxygen was included in process gas, a cubic spinel phase was not formed even after the thermal annealing at $900^{circ}C$. The thermistor thin film had no other elements except Mn, Ni and Co. The infrared reflection spectra of the thermistor thin films showed that the films had somewhat high reflectance for incoming infrared ray with some angle. The etch rate of the thermistor thin films was about 63nm/min at a condition of DI water : $HNO_3$: HCl = 60 : 30 : 10 vol%. The B constant and temperature coefficient of resistance of the thermistor thin films were 3500 K and -3.95 %/K, respectively. The voltage responsivity of the thermistor thin film infrared sensor was 108.5 V/W and its noise equivalent power and specific detectivity were $5.1 imes 10^{-7}$ W/$Hz^{-1/2}$ and $0.2 imes 10^6$cm $Hz^{1/2}$/W, respectively.