The behaviors of diamond deposition using microwave plasma chemical vapor deposition method have been studied by varying the concentration of methane in the methane - hydrogen gas mixture. The carbonization is checked from peak intensities of D($sp^3$) and G($sp^2$) peaks in Raman spectra. The hydronization and C-H bonding status in films can also be determined from FTIR results. Both the bonding strength of C-H and the ratio of $sp^3$ to $sp^2$ in bonding are found to be slightly dependent of partial pressure of $CH_4$ Judging from above results, we can conclude that the best value for partial pressure of $CH_4$ in growing process of thick films is about 13.8%.