In this paper, a new modeling methodology of thin film bulk acoustic resonator(TFBAR) is presented and the formulations of each lumped element in the model are also introduced. The new model is based upon the Mason model that is a reasonable model to explain the physical characteristics of unit TFBAR. After simplifying the modified Mason model with an additional dielectric loss term, the new model similar to Modified Butterworth-Van Dyke(MBVD) model is complete. The proposed model has three optimization variables which is half of the MBVD model. As a result, the curve fittings for the measured data are much faster and more accurate than any other conventional models. Moreover, it is very useful to design the bandpass filters or voltage controlled oscillators due to the design parameters, such as resonant and anti-resonant frequency, which can reflect the intentions of designer in the model.