We studied the magnetotransport properties of tunnel junctions with AlO and AlN barriers fabricated using microwave-excited plasma. The plasma nitridation process provided wider controllability than the plasma oxidization for the formation of MTJs with ultra-thin insulating layer, because of the slow nitriding rate of metal Al layers, comparing with the oxidizing rate of them. High tunnel magnetoresistance (TMR) ratios of 49 and 44% with respective resistance-area product $(R{ imes}A) of 3 { imes} 10^4 and 6 { imes} 10^3 {Omega}{mu}m^2$ were obtained in the Co-Fe/Al-N/Co-Fe MTJs. We conclude that AlN is a hopeful barrier material to realize MTJs with high TMR ratio and low $R{ imes}A$ for high performance MRAM cells. In addition, in order to clarify the annealing temperature dependence of TMR, the local transport properties were measured for Ta $50{AA} /Cu 200 {AA}/Ta 50 {AA}/Ni_{76}Fe_{24} 20 {AA}/Cu 50 {AA}/Mn_{75}Ir_{25} 100 {AA}/Co_{71}Fe_{29} 40 {AA}/Al-O$ junction with $d_{Al}= 8 {AA} and P_{O2}{ imes}t_{0X}/ = 8.4 { imes} 10^4$ at various temperatures. The current histogram statistically calculated from the electrical current image was well in accord with the fitting result considering the Gaussian distribution and Fowler-Nordheim equation. After annealing at $340^{circ}C$, where the TMR ratio of the corresponding MTJ had the maximum value of 44%, the average barrier height increased to 1.12 eV and its standard deviation decreased to 0.1 eV. The increase of TMR ratio after annealing could be well explained by the enhancement of the average barrier height and the reduction of its fluctuation.