We present a multi-Gbit/s digital I/O interface based on RF-modulation and capacitive-coupling over an impedance matched transmission line. The RF-interconnect(RFI) can greatly reduce the digital switching noise and eliminate the dc power dissipation over the channel. It also enables reduced signal amplitude(as low as 200 ㎷) with enhanced data rate and affordable circuit overhead. This paper addresses the system advantages and implementation issues of RFI. A prototype on-chip RFI transceiver is implemented in 0.18-${mu}{ extrm}{m}$ CMOS. It demonstrates a maximum data rate of 2.2 Gbit/s via 10.5-㎓ RF-modulation. The RFI can be very instrumental for future high-speed inter- and intra-ULSI data links.